march 2010 doc id 16005 rev 2 1/7 7 1N5811U aerospace 6 a fast recovery rectifier features aerospace applications surface mount hermetic package high thermal conduct ivity materials very small conduction losses negligible switching losses extremely fast switching low forward voltage drop package mass: 0.18 g target radiation qualification ? 150 krad (si) low dose rate ? 3 mrad (si) high dose rate escc qualified description this power ultrafast recovery rectifier is designed and packaged to comply with the escc5000 specification for aerospace products. it is housed in a surface mount hermetically sealed lcc2b package whose footprint is 100% compatible with industry standard solutions in d5b. the 1N5811U is suitable for switching mode power supplies and high frequency dc to dc converters such as low voltage high frequency inverter, free wheeling or polarity protection . a k k a lcc2b table 1. device summary (1) 1. contact st sales office for information about the specif ic conditions for products in die form and qml-q versions. order code escc detailed specification quality level lead finish eppl i f(av) v rrm t j(max) v f (max) 1N5811Ub1 - engineering model gold plated - 6 a 150 v 175 c 0.995 v 1N5811U01b 5101/013/11 flight part gold plated y 1N5811U02b 5101/013/12 flight part solder dip y www.st.com
characteristics 1N5811U 2/7 doc id 16005 rev 2 1 characteristics to evaluate the conduction losses use the following equation: p = 0.68 x i f(av) + 0.03 i f 2 (rms ) table 2. absolute ratings (limiting values) symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) forward rms current 10 a i f(av) average forward rectified current t c = 135 c , = 0.5 6 a i fsm forward surge current t p = 8.3 ms sinusoidal 105 a t p = 10 ms sinusoidal 100 t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature 175 c t sol maximum soldering temperature (1) 245 c 1. maximum duration 5 s. the same package must not be resoldered until 3 minutes have elapsed. table 3. thermal resistance symbol parameter value unit r th (j-c) (1) junction to case 6.5 c/w 1. package mounted on infinite heatsink table 4. static electrical characteristics symbol parameter tests cond itions min. typ. max. unit i r (1) reverse current t j = 25 c v r = 150 v --2 a t j = 125 c - - 30 t j = 25 c v r = 160 v --10 a t j = -65 c - - 10 v f (2) forward voltage t j = 25 c i f = 3 a - - 865 mv t j = 25 c i f = 4 a --900 t j = 125 c - - 800 t j = -65 c - - 1075 t j = 25 c i f = 6 a - - 955 1. pulse test : tp = 5 ms, < 2% 2. pulse test : tp = 680 s, < 2%
1N5811U characteristics doc id 16005 rev 2 3/7 table 5. dynamic characteristics symbol parameter test conditions min. typ max. unit t rr reverse recovery time i f = i r = 1 a, i rr = 0.1 a, di/dt = -100 a/s, (min) 30 ns i f = 1 a, v r = 30 v, di/dt = -50 a/s, 35 v fp forward recovery voltage i fm = 500 ma 2.2 v t fr forward recovery time i fm = 500 ma, v fr = 1.1 x v f 15 ns c j diode capacitance v r = 10 v, f = 1 mhz 60 pf figure 1. forward voltage drop versus forward current (typical values) figure 2. forward voltage drop versus forward current (maximum values) 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i fm (a) t j =-65 c t j =125 c t j =125 c t j =25 c t j =25 c v fm (v) 0 2 4 6 8 10 12 14 16 18 20 0 . 00 .2 0 .4 0 . 60 . 8 1. 0 1.2 1.4 i fm (a) t j =-65 c t j =125 c t j =125 c t j =25 c t j =25 c v fm (v) figure 3. reverse leakage current versus reverse voltage applied (typical values) figure 4. relative variation of thermal impedance, junction to case, versus pulse duration 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 0 20 40 60 80 100 120 140 160 i r (a) t t j j =125 = 25 c c t j =75 c v r (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z th(j-c) /r th(j-c) single pulse lcc2b t p (s)
characteristics 1N5811U 4/7 doc id 16005 rev 2 figure 5. reverse recovery time versus di f /dt figure 6. junction capacitance versus reverse voltage applied (typical values) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 400 450 500 t rr (ns) i f =i f(av) v r =120 v t j =25 c t j =125 c di f /dt(a/s) 10 100 1 10 100 1000 c(pf) f=1 mhz v osc =30 mv rms t j =25 c v r (v)
1N5811U package information doc id 16005 rev 2 5/7 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. leadless chip carrier 2 (lcc2b) package dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a (1) 1. measurement prior to solder coating the mounting pads on bottom of package 2.04 2.23 2.42 0.080 0.088 0.095 b 5.27 5.4 5.6 0.207 0.213 0.220 c 3.49 3.62 3.82 0.137 0.143 0.150 d 1.71 1.90 2.09 0.067 0.075 0.082 e 0.48 - 0.71 0.019 0.028 0.028 f - 1.4 - - 0.055 - g - 3.32 - - 0.131 - h - 1.82 - - 0.072 - i - 0.15 - - 0.006 - r1 - 0.15 - - 0.006 - r2 - 0.20 - - 0.008 - note 1: the anode is identified by metallization in two top internal angles and the index mark. pin 2 cathode pin 1 anode 2 1 2 1 r2 r1 g i h e e note 1 note 1 note 1 f d a b c
ordering information 1N5811U 6/7 doc id 16005 rev 2 3 ordering information 4 revision history table 7. ordering information (1) 1. contact st sales office for information about the sp ecific conditions for produc ts in die form and qml-q versions. order code escc detailed specification package lead finish marking eppl mass packing 1N5811Ub1 - lcc2b gold plated 11ub1 - 0.18 g waffle pack 1N5811U01b 5101/013/11 gold plated 11u01b y 0.18 g 1N5811U02b 5101/013/12 solder dip 11u02b y table 8. document revision history date revision changes 27-jul-2009 1 first issue. 25-mar-2010 2 updated escc status in features . added footnote to ta bl e 3 .
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